Excess Carrier Phenomenon in Semiconductors
ثبت نشده
چکیده
منابع مشابه
Field Dependent Charge Carrier Transport for Organic Semiconductors at the Time of Flight Configuration
In this paper, we used the time-of-flight (TOF) of a charge packet, that injected by a voltage pulse to calculate the drift velocity and mobility of holes in organic semiconducting polymers. The technique consists in applying a voltage to the anode and calculating the time delay in the appearance of the injected carriers at the other contact. The method is a simple way to determine the charge t...
متن کاملConductivity-limiting bipolar thermal conductivity in semiconductors
Intriguing experimental results raised the question about the fundamental mechanisms governing the electron-hole coupling induced bipolar thermal conduction in semiconductors. Our combined theoretical analysis and experimental measurements show that in semiconductors bipolar thermal transport is in general a "conductivity-limiting" phenomenon, and it is thus controlled by the carrier mobility r...
متن کاملSuppression of compensating native defect formation during semiconductor processing via excess carriers
In many semiconductors, compensating defects set doping limits, decrease carrier mobility, and reduce minority carrier lifetime thus limiting their utility in devices. Native defects are often responsible. Suppressing the concentrations of compensating defects during processing close to thermal equilibrium is difficult because formation enthalpies are lowered as the Fermi level moves towards th...
متن کاملFree-carrier contribution to the optical response of N-rich Cu3N thin films
The influence of nitrogen excess on the optical response of N-rich Cu3N films is reported. The optical spectra measured in the wavelength range from 0.30 to 20.00μm have been correlated with the elemental film composition which can be adjusted in the nitrogen atomic percentage (at%) range from 27 ± 2 up to 33 ± 2. The absorption spectra for the N-rich films are consistent with direct optical tr...
متن کاملAnalysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities
D Analysis of Excess Carrier Concentration Control in Fast-Recovery High Power Bipolar Diodes at Low Current Densities X. Perpiñà, X. Jordà, M. Vellvehi, J. Vobecky, and N. Mestres Instituto de Microelectrónica de Barcelona, IMB-CNM (CSIC), Campus Universitat de la Autònoma de Barcelona, Bellaterra, Barcelona 08193, Spain ABB Switzerland Limited, Semiconductors, CH-5600 Lenzburg, Switzerland In...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2005